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1. product pro?le 1.1 general description combination of an npn transistor with low v cesat and high current capability and a planar schottky barrier recti?er with an integrated guard ring for stress protection in a sot353 (sc-88a) small plastic package. pnp complement: pmem1505pg. 1.2 features n 300 mw total power dissipation n current capability up to 0.5 a n reduces printed-circuit board area required n reduces pick and place costs n small plastic smd package n transistor u low collector-emitter saturation voltage. n diode u ultra high-speed switching u very low forward voltage u guard ring protected. 1.3 applications n dc-to-dc converters n inductive load drivers n general purpose load drivers n reverse polarity protection circuits n mosfet drivers. 1.4 quick reference data [1] mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint for sot353. PMEM1505NG npn transistor/schottky recti?er module rev. 01 25 may 2004 product data sheet table 1: quick reference data symbol parameter conditions min typ max unit npn transistor v ceo collector-emitter voltage open base - - 15 v i c collector current (dc) continuous [1] - - 0.5 a schottky barrier recti?er v r continuous reverse voltage - - 20 v i f continuous forward current - - 0.5 a
9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 2 of 11 philips semiconductors PMEM1505NG npn transistor/schottky recti?er module 2. pinning information 3. ordering information 4. marking [1] * = p: made in hong kong. * = t: made in malaysia. * = w: made in china. 5. limiting values table 2: discrete pinning pin description simpli?ed outline symbol 1 anode 5 cathode 4 collector 2 base 3 emitter 1 3 5 4 2 top view sym023 45 2 3 1 table 3: ordering information type number package name description version PMEM1505NG - plastic surface mounted package; 5 leads sot353 table 4: marking type number marking code [1] PMEM1505NG l7* table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit npn transistor v cbo collector-base voltage open emitter - 15 v v ceo collector-emitter voltage open base - 15 v v ebo emitter-base voltage open collector - 6 v i c collector current (dc) continuous [1] - 0.5 a continuous [2] - 0.6 a continuous; t s 55 c [3] -1a i cm peak collector current - 1 a i bm peak base current - 100 ma
9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 3 of 11 philips semiconductors PMEM1505NG npn transistor/schottky recti?er module [1] mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint for sot353. [2] device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm 2 mounting pad for both collector and cathode. [3] solder point of collector or cathode tab. 6. thermal characteristics [1] for schottky barrier recti?ers thermal run-away has to be considered, as in some applications the reverse power losses p r are a signi?cant part of the total power losses. nomograms for determining the reverse power losses p r and i f(av) rating will be available on request. [2] solder point of collector or cathode tab. [3] device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm 2 mounting pad for both collector and cathode. [4] mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint for sot353. [5] mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint. p tot total power dissipation t amb 25 c [1] - 200 mw t amb 25 c [2] - 250 mw t s 55 c [3] - 800 mw t j junction temperature - 150 c schottky barrier recti?er v r continuous reverse voltage - 20 v i f continuous forward current - 0.5 a i fsm non-repetitive peak forward current t = 8.3 ms; square wave -5a p tot total power dissipation t amb 25 c [1] - 100 mw t amb 25 c [2] - 200 mw t s 55 c [3] - 800 mw t j junction temperature [2] - 125 c combined device p tot total power dissipation t amb 25 c [2] - 300 mw t stg storage temperature - 65 +150 c t amb operating ambient temperature [2] - 65 +125 c table 5: limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 6: thermal characteristics [1] symbol parameter conditions typ unit single device r th(j-s) thermal resistance from junction to solder point in free air [2] 120 k/w r th(j-a) thermal resistance from junction to ambient in free air [3] 395 k/w [4] 495 k/w combined device r th(j-a) thermal resistance from junction to ambient in free air [5] 410 k/w
9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 4 of 11 philips semiconductors PMEM1505NG npn transistor/schottky recti?er module 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7: characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit npn transistor i cbo collector-base cut-off current v cb =15v; i e = 0 a - - 100 na v cb =15v; i e =0a; t j = 150 c --50 m a i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 100 na h fe dc current gain v ce =2v; i c =10ma 200 - - v ce =2v; i c = 100 ma 150 - - v ce =2v; i c = 500 ma 90 - - v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - - 25 mv i c = 200 ma; i b = 10 ma - - 150 mv i c = 500 ma; i b = 50 ma - - 250 mv r cesat equivalent on-resistance i c = 500 ma; i b =50ma [1] - 300 < 500 m w v besat base-emitter saturation voltage i c = 500 ma; i b =50ma [1] - - 1.1 v v beon base-emitter turn-on voltage v ce =2v; i c = 100 ma [1] - - 0.9 v f t transition frequency v ce =5v; i c = 100 ma; f = 100 mhz 250 420 - mhz c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz - 4.4 6 pf schottky barrier recti?er v f continuous forward voltage see figure 1 i f =10ma [1] - 240 270 mv i f = 100 ma [1] - 300 350 mv i f = 500 ma [1] - 400 460 mv i f = 1000 ma [1] - 480 550 mv i r reverse current see figure 2 v r =5v [1] -510 m a v r =8v [1] -720 m a v r =15v [1] -1050 m a c d diode capacitance v r = 5 v; f = 1 mhz; see figure 3 - 1925pf
9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 5 of 11 philips semiconductors PMEM1505NG npn transistor/schottky recti?er module schottky barrier recti?er . (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. schottky barrier recti?er . (1) t amb = 125 c. (2) t amb =85 c. (3) t amb =25 c. fig 1. forward current as a function of forward voltage; typical values. fig 2. reverse current as a function of reverse voltage; typical values. schottky barrier recti?er ; f = 1 mhz; t amb =25 c. npn transistor ; v ce =2v. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. fig 3. diode capacitance as a function of reverse voltage; typical values. fig 4. dc current gain as a function of collector current; typical values. 001aaa479 10 2 10 10 3 i f (ma) 1 v f (v) 0 0.5 0.4 0.2 0.3 0.1 (1) (2) (3) 001aaa480 10 2 10 10 4 10 3 10 5 i r ( m a) 1 v r (v) 025 20 10 15 5 (3) (2) (1) v r (v) 020 15 510 001aaa481 40 20 60 80 c d (pf) 0 001aaa482 200 400 600 h fe 0 i c (ma) 10 - 1 10 3 10 2 110 (3) (2) (1)
9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 6 of 11 philips semiconductors PMEM1505NG npn transistor/schottky recti?er module npn transistor ; v ce =2v. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 150 c. npn transistor ; i c /i b = 20. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. fig 5. base-emitter voltage as a function of collector current; typical values. fig 6. collector-emitter saturation voltage as a function of collector current; typical values. npn transistor ; i c /i b = 20. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 55 c. fig 7. equivalent on-resistance as a function of collector current; typical values. 001aaa483 0.5 0.7 0.3 0.9 1.1 v be (v) 0.1 i c (ma) 10 - 1 10 3 10 2 110 (3) (2) (1) 001aaa484 10 2 10 10 3 v cesat (mv) 1 i c (ma) 10 - 1 10 3 10 2 110 (3) (1) (2) 001aaa485 10 1 10 2 r cesat ( w ) 10 - 1 i c (ma) 10 - 1 10 3 10 2 110 (3) (1) (2)
9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 7 of 11 philips semiconductors PMEM1505NG npn transistor/schottky recti?er module 8. application information fig 8. dc-to-dc converter. fig 9. inductive load driver (relays, motors and buzzers) with free-wheeling diode. mle231 r load controller v out v in mdb577 v cc in
philips semiconductors PMEM1505NG npn transistor/schottky recti?er module 9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 8 of 11 9. package outline fig 10. package outline. references outline version european projection issue date iec jedec eiaj sot353 wb m b p d e 1 e a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 plastic surface mounted package; 5 leads sot353 unit a 1 max b p cd e (2) e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 97-02-28 sc-88a
9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 9 of 11 philips semiconductors PMEM1505NG npn transistor/schottky recti?er module 10. revision history table 8: revision history document id release date data sheet status change notice order number supersedes PMEM1505NG_1 20040525 product data - 9397 750 12752 -
philips semiconductors PMEM1505NG npn transistor/schottky recti?er module 9397 750 12752 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 25 may 2004 10 of 11 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 14. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 25 may 2004 document order number: 9397 750 12752 published in the netherlands philips semiconductors PMEM1505NG npn transistor/schottky recti?er module 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 application information. . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 12 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 14 contact information . . . . . . . . . . . . . . . . . . . . 10

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